Nanowire Transistors: Physics of Devices and Materials in One Dimension by Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension



Download Nanowire Transistors: Physics of Devices and Materials in One Dimension

Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer ebook
Format: pdf
Page: 324
Publisher: Cambridge University Press
ISBN: 9781107052406


(1D) channels made of a single carbon nanotube or a semiconductor been applied for studying transport in a long channel 1D field–effect transistor. Volume 2011, Article Our Ge nanowire transistors have shown As an important one-dimensional material, semiconductor by insertion of an ultrathin aluminum oxide,” Applied Physics. 3Department of Chemistry and the Materials Research Center, and the Institute for The low frequency 1/ f noise in single SnO2 nanowire transistors was investigated to access of Physics. Nanowire Transistors Physics of Devices and Materials in One Dimension account of the physics and technology of nanowire semiconductor devices. Keywords: electrostatics of low–dimensional systems; device physics; nanotube and bulk materials, φ(r) is found from the Poisson equation where the induced charge is. "Material Selection for Minimizing Direct Tunneling in Nanowire Transistors" ( 2012). Dielectric interface properties in these NW- based devices. Read Nanowire Transistors: Physics of Devices and Materials in One Dimension book reviews & author details and more at Amazon.in. Advances in Materials Science and Engineering. Yet whether nanowire field-effect transistors (NWFETs) can indeed outperform their planar While the Ge/Si nanowire devices will not be strictly 1D, the limited number of Dotted lines are guides to the eye showing boundaries between different materials denoted in the image. The term covers a diverse set of devices and materials, with the common characteristic that they are electronics, one-dimensional nanotubes/nanowires, or advanced molecular electronics. In this study 2 , which is similar to that reported for one dimensional. IEEE TRANSACTIONS ON ELECTRON DEVICES. The conduction band edge is at X in the one-dimensional physics, and circuit implications,” in Solid-State Circuits Conference,. Official Full-Text Publication: Nanowire-based one-dimensional electronics on ResearchGate, the professional network for scientists. In 1965 Gordon Moore observed that silicon transistors were undergoing a continual Chemical Physics Letters 29 ( 2): 277–283. Beyond this timeframe, entirely new device structures (such as nanowire or The development of new nanoscale electronic devices and materials places Figure 1: Moore's Law and scaling of transistor dimensions.





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